Abstract
(In)GaAsN epilayers were grown on GaAs substrates by molecular beam epitaxy (MBE) with a DC constricted-plasma source. Nitrogen incorporation efficiency, crystalline quality, surfacemorphology and luminescent properties of the epilayers werestudied and correlated with various operation regimes of the source.The nitrogen incorporation efficiency grows withincreasing plasma discharge current.The maximum nitrogen concentration in the epilayer is as high as3.7 %.GaAsN as thick as 0.35 µm can be pseudomorphically grown on GaAs, andphotoluminescence is observed at room temperature.The crystalline quality and surface morphology of an epilayer can also be improvedby reducing the ion damage at low plasma discharge current.The DC constricted-plasma source is a promising alternative nitrogenplasma source for investigating InGaAsN materials.
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