Abstract
Atomically smooth cubic AlN (c-AlN) layers were grown by plasma assisted molecular beam epitaxy (PAMBE) using freestanding 3C–SiC substrates. A model based on reflection high electron energy diffraction (RHEED) transients has been developed to lead the way to optimal growth conditions. Confirmation of the cubic structure of the AlN layers was gained by high resolution X-ray diffraction (HRXRD) measurements yielding a lattice parameter of 4.373 Å. Finally atomic force microscopy (AFM) scans revealed an atomically smooth surface with a roughness of 0.2 nm RMS.
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