Abstract
The authors report the effect of profile design and MBE (molecular beam epitaxy) growth conditions on the material characteristics and device performance of W-band and D-band InGaAs/InAlAs/InP HEMTs (high electron mobility transistors). The performance advantage of pseudomorphic channels compared to lattice-matched devices is significant in these devices. Using lattice-matched In/sub 0.53/Ga/sub 0.47/As channels, a noise figure of 1.7 dB with 7.7-dB associated gain at 93 GHz has been achieved. However, using pseudomorphic In/sub 0.60/Ga/sub 0.40/As channels, a 1.3-dB noise figure with 8.2-dB associated gain at 93.5 GHz has been achieved. The authors have also measured 7.3-dB gain at 141.5 GHz using In/sub 0.60/Ga/sub 0.40/As devices. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
