Abstract
An improved quality of (110) GaAs has been grown by molecular beam epitaxy using As 2 in lieu of As 4. The most pronounced effect of using As 2 is a higher doping efficiency of Si δ-doped GaAs layers, resulting in a mobility of the (110) layers, comparable to the reference (100) samples. The high quality of the (110) GaAs was confirmed by low temperature photoluminescence. The spectrum of the GaAs layer shows a single dominant free exciton line with a linewidth of 1.0 meV.
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