Abstract
This paper describes molecular beam epitaxial growth, processing and room temperature characterization of lattice-matched GaInAsSb mid-infrared detectors on GaSb substrates for room temperature operation. For the first time, we demonstrate GaInAsSb detectors operating under back-illumination, a critically important geometry for flip-chip-mounted focal plane arrays, and achieve performance equal or superior to front-illuminated detectors. Very high quantum efficiency and flat spectral response are achieved for the back-illuminated detectors due to improved carrier collection efficiency, photon recycling and reduced carrier recombination. In situ RHEED intensity oscillations and post-growth XRD are used for coarse and fine tuning of GaInAsSb lattice matching, respectively.
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