Abstract
Carbon nitride films were deposited using a low pressure, dual ion beam system consisting of a filtered cathodic vacuum arc and a plasma beam source for carbon and nitrogen ions, respectively. This system maintains highly ionized beams even at high nitrogen fluxes, unlike in single beam systems. Film composition and bonding were measured by electron energy loss spectroscopy. Films with nitrogen to carbon atom ratios (N/C) up to 0.5 are produced. The carbon bonding is found to change gradually from sp3 to sp2, rather than sharply above a critical N content, as found previously. This indicates that N atoms form individual C=N bonds rather than causing a reversion of the entire C network to sp2. This allows us to maintain C sp3 bonding to the highest N contents so far achieved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
