Abstract
On the basis of a mathematical model proposed previously [S. Kobayashi, J. Crystal Growth 174 (1997) 163], oxygen precipitation in growing Czochralski (CZ) crystals is analyzed, and the calculated results are compared with experimental data of grown-in defects observed with laser scattering tomography (LST). The behavior of oxygen precipitates is qualitatively very similar to that of grown-in defects, but there are quantitative discrepancies between the calculation and the observation. The formation process of grown-in defects is discussed.
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