Abstract
The evolution of monolithic high-speed digital and analog microwave field-effect transistor (FET) technologies is linked inextricably to synthesis, control, and understanding of the properties of the semiconducting binary, ternary, and quaternary III–V compounds. It is also linked to the application and use of ion implantation as a pivotal corollary process. Selection of a Schottky barrier, insulated-gated or heterojunction gate technology defines, in part, the options available in terms of the fundamental surface and interfacial properties of these compounds. Others concern electron transport processes under surface depletion, inversion and accumulation regimes, and the solution of metallurgical problems involved in the formation of ohmic and blocking contacts, the free carrier concentration and mobility profiles, and their stability as a function of process variables used to make such FET.
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