Abstract
AbstractA variety of semiconductor materials have been used to fabricate diode lasers for the midinfrared. Lasers using the lead salts (e.g. PbSnTe) have been commercially available for some time. Mid-infrared emitting III-V semiconductors (e.g. InGaAsSb) have superior thermal conductivity, and diode lasers fabricated from these materials offer higher powers. Of particular interest are the III-V semiconductor lasers based on type-II superlattices (e.g. InAs/GaInSb). Among the many unique properties attributed to type-Il superlattices are small hole mass, reduced Auger recombination, and less inter-valence band absorption - all important for better lasers. Recent results with Quantum Cascade-type lasers are also very encouraging. This paper summarizes the important semiconductor materials for mid-infrared lasers with emphasis on the type-II superlattices.
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