Abstract
In this work, the chemical mechanical polishing (CMP) behavior of KMnO4 on Ti0.4Sb2Te3 (TST) film has been studied. The material remove rate (RR) of TST film increases from 80 nm/min to 234 nm/min when the concentration of KMnO4 changes from 50 ppm to 300 ppm, which is much faster than 60 nm/min of the 0.1 wt% H2O2-based slurry. The etched surface morphologies of TST films are observed by scan electron microscope (SEM). To further investigate the chemical behavior of KMnO4, linear polarization scanning (LP) is combined with electrochemical impedance spectroscopy (EIS). Finally, the X-ray photoelectron spectroscopy was also utilized to analyze the chemical reaction mechanism of KMnO4 and TST film surface.
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