Abstract
Nitrogen doping is considered a most important technique for the improvement of defect-related properties of CZ and FZ silicon. The present status of experimental techniques for the diagnostics of nitrogen in its various configurations is reviewed. Infrared spectroscopy on the local vibrational modes of nitrogen and the electronic transitions of nitrogen-oxygen complexes has the highest potential for the routine assessment of nitrogen. Recent progress in clarification of the structural identity of nitrogen-oxygen complexes allows an extremely sensitive detection of nitrogen in CZ silicon and gives new insight into the mechanisms of interaction between nitrogen and oxygen.
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