Abstract
We report on the manipulation of the fluorescence quenching of Rhodamine 6G (R6G) on graphene by defect engineering via hydrogen and Ar+ plasma treatments. The amount and nature of defects in graphene were estimated on the basis of the Raman intensity ratios I(D)/I(G) and I(D)/I(D′) of graphene. Results showed that the quenching factor (QF) gradually decreases from ∼40 to ∼4 and ∼12 for hydrogenated graphene (sp3 defects) and Ar+-plasma-treated graphene (vacancy-like defects), respectively, with different amounts of defects. Our results indicated that the fluorescence quenching efficiency of graphene is strongly dependent on the amount and nature of defects.
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