Abstract
The artificial random Gaussian-type potential built in the GaAs/AlGaAs superlattices grown by molecular beam epitaxy was explored by various methods. The effect of the intentional disorder was shown to dominate intrinsic superlattice imperfections and its impact on the electronic properties was found to be in good agreement with the theoretical predictions. It was demonstrated that the modern state of the molecular beam epitaxy allows for a growth of the superstructured materials with well-defined disorder strength.
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