Abstract
The paper describes the numerical analysis of scattering effects in the presence of defects (to 5 · 10 17 cm −3) and dislocations (to 5 · 10 11 cm −2) on the relaxation time and mobility of major carriers in ultra heavily doped n-Si (to 6 · 10 21 cm −3) in the temperature range from 250 to 400 K. A detailed physical model was used with self consistently determined Fermi energy and screening length. The obtained total average relaxation time and mobility agree well with the experimental results.
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