Abstract
A numerical analysis of drift and Hall mobility of majority carriers has been made as a function of impurity concentration (from N D = 10 20 to 6 × 10 21 cm −3) in n-Si at temperatures ranging from 250 to 400 K. A detailed physical model and a self-consistent method for determining the screening length and the Fermi energy level was used. At higher doping levels ( N D > 4 × 10 20 cm −3), the correction of the effective mass is taken into account. Numerical results have been compared with known experimental results from the literature. Good agreement is obtained.
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