Abstract
Hybrid nanostructured InSb - MnSb films were obtained by the pulsed laser deposition using the mechanical droplet separation. Films structure was characterized by different methods (electron diffraction, scanning electron microscopy, atomic and magnetic force microscopy). The negative magnetoresistance (nMR) takes place below 100 K. This temperature is several times more than the temperature at which the nMR occurs in homogenous In1-xMnxSb films. At low temperatures the spin-dependent scattering of the holes by the localized Mn2+ moments prevails. When the temperature rises, the low nMR is observed due to the weak spin-dependent scattering on magnetic inclusions.
Highlights
Incorporating of local magnetic moments into a semiconductor matrix is one of suitable ways for a realization of manipulating by electron and spin subsystems [1]
The critical temperature of MnAs TC = 317 K is slightly higher than the room temperature
2.1 Experimental results Thin hybrid InSb - MnSb films were obtained by pulsed laser deposition (PLD)
Summary
Incorporating of local magnetic moments into a semiconductor matrix is one of suitable ways for a realization of manipulating by electron and spin subsystems [1]. MnAs and MnSb are high temperatures ferromagnetic semimetals and formed nanoclusters with suitable structure compatibilities to III-V compounds [8]. It is shown that MnAs/III-V structures with the huge positive magnetoresistance and the robust tunnel megnetoresistance effect may find an application in high sensitivity magnetic sensors and other magneto-electric devices [3, 9].
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