Abstract
We present new methods to pattern and characterize the overgrown cleaved egde (CE) of GaAs/AlGaAs heterostructures. Four point measurements, which allow a direct measurement of the magnetotransport coefficients ρ xx and ρ xy of a two-dimensional electron system on the CE, have been out of reach so far. By means of novel preparation techniques a contacted Hall bar structure can be created on the edge of the cleavage plane. The potential of the new method is first tested on a system which is density modulated in a direction parallel to the current flow due to an underlying GaAs/AlGaAs superlattice. To create a two-dimensional electric modulation we managed to pattern the active area of the Hall bar with periodically arranged lines in the direction perpendicular to the MBE-grown superlattice. The resulting unit cells are reflected in magnetoresistance oscillations associated with the most prominent one-dimensional Fermi contours along x- and y-direction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
