Abstract
By using the MBE technique, we fabricated a GaAs film which contains three Si (delta) -doping layers, which form a three QW structure. Transverse magnetoresistance, longitudinal magneto-resistance and Hall resistance have been measured at low temperature from 0.3 K to 4.2 K and high magnetic field up to 7 T. SdH oscillation of the transverse magnetoresistance and diamagnetic SdH oscillation of the longitudinal magnetoresistance have been observed. Based on the experimental results, mechanism of the longitudinal oscillation and the Hall oscillation have been discussed.
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