Abstract
One of the interesting but still not well understood problems in condensed matter physics is the nature of the superconductor-insulator transition (SIT) in thin (2 dimensional, 2D) superconducting films. The SIT may be induced either by decreasing the film thickness d (d-SIT), or by application of the external magnetic field H (H-SIT). Recent studies of some of the 2D systems, InOx and TiN, in which concentration of carriers (n) is small, uncovered unusual properties on the insulating side of the H-SIT, including huge magnetoresistance peak [1, 2]. On the other hand, the 2D systems with large n, such as MoGe, Bi, PbBi or Nb1-xSix, display only modest increase of resistance in the vicinity of the H-SIT. It has been suggested that unusual effects in the systems with small n are caused by the existence of superconducting islands immersed in the insulating matrix [3].
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