Abstract
We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also be the first device geometry in which spin-torque effects are applied to manipulate magnetic dynamics, in order to make non-volatile magnetic random access memory. However, there remain many unanswered questions about such basic properties as the magnetoresistance of MTJs, how their properties change as a function of tunnel-barrier thickness and applied bias, and what are the magnitude and direction of the spin-transfer-torque vector induced by a tunnel current.
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