Abstract
The expressions for the effective-medium dielectric tensor of a superlattice comprising doped semiconductor layers in the presence of a magnetic field are derived. They are applied to calculations of reflectivity, bulk and surface polariton dispersion curves and attenuated total reflection (ATR). Numerical results are presented for an n-p and for an n-n' superlattice, the latter being a model for delta -doped GaAs.
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