Abstract
We present photoluminescence excitation spectra of a p+− i− n+ GaAs/ Ga0.65Al0.35As heterostructure, with the intrinsic region consisting of five isolated wells (160A). Two different sets of experiments will be presented. in the former experiment, a small magnetic field of 0.5T is applied perpendicularly to the wells in order to enhance the oscillator strength of the excited states of the heavy-hole excitons (h1(x)] and to remove the Kramers degeneracy. These states are tuned by means of an electric field, parallel to the magnetic field. In the latter experiment, the pseudo-absorption of the quantum well is studied as a function of magnetic field. Due to the high quality of the sample, the n-s series of the heavy-hole and light-hole excitons are resolved at fields as low as 1T. The features in the spectra are identified as excited states of excitons by comparison with calculations that take into account exciton mixing in the presence of electric and magnetic fields.
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