Abstract
The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented. The monolithic structure consisted of a gallium arsenide substrate with deposited nickel layer (GaAs-Ni), and the composite structure contained a semiconductor substrate with an amorphous magnetic alloy (GaAs-Metglas) ribbon glued on one side. A quality factor Q ≈ 23500 and magnetoelectric coefficient of 316 V/Oe.cm were achieved at the frequency of planar acoustic oscillations for GaAs-Ni structure at room temperature.
Highlights
Magnetoelectric (ME) effect manifests itself as polarization of the sample in the external magnetic field and observed in layered composite magnetostrictive-piezoelectric structures due to mechanical coupling between the layers [1]
There are number of other materials with high piezomodule to dielectric permittivity ratio d31/ε, that is required for effective ME interaction, which are used in such composite structures along with ceramic piezoelectric materials: piezoelectric single crystals [2] and flexible piezopolymers, like PVDF [3]
In this paper authors investigated frequency and field characteristics of ME effect in composite structures based on semiconductor gallium arsenide substrate with most commonly used magnetostrictive materials such as nickel and amorphous magnetic alloy
Summary
Magnetoelectric (ME) effect manifests itself as polarization of the sample in the external magnetic field and observed in layered composite magnetostrictive-piezoelectric structures due to mechanical coupling between the layers [1]. In this paper authors investigated frequency and field characteristics of ME effect in composite structures based on semiconductor gallium arsenide substrate with most commonly used magnetostrictive materials such as nickel and amorphous magnetic alloy.
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