Magneto-tunneling in the n-type-GaAs/AlGaAs wide-well double barrier structure under transverse high magnetic fields

Abstract

The magneto-tunneling effect was studied in the n-GaAs/Al 0.4Ga 0.6As double barrier structure with a wide quantum well under high magnetic fields up to 35T parallel to the layers. In addition to the oscillatory tunneling structures, we found a shoulder structure in the d I/d V characteristics and a perfect quenching of the tunneling current below the threshold voltage at high magnetic fields. The calculations taking account of the finite barrier height suggest that the shoulder structure corresponds to the onset of the tunneling into the mixed states extending over the well and the collector, and that the current quenching is caused by the absence of the well state into which emitter electrons can tunnel.