Abstract
We present a study of the intensity of the electric-dipole-induced spin resonance in n-type zinc-blende semiconductors in the parellel Voigt geometry. We show for electrons in the conduction band of InSb that the interference between electric-dipole and magnetic-dipole matrix elements in the parellel Voigt geometry arises entirely from the inversion asymmetry parameter characterizing the spin-orbit coupling. The corrections due to non-parabolicity and warping of the bands are calculated and shown to be negligible.
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