Abstract
The magnetic properties of multilayer Gd/Si/Co magnetic films are experimentally studied by electron magnetic resonance and analyzed theoretically. The introduction of a semiconductor silicon interlayer is found to substantially affect the magnetic interlayer coupling and the magnetic dynamics of the system. The interlayer coupling is shown to be ferromagnetic for the (Gd/Si)n films and to be antiferromagnetic for the (Gd/Si/Co/Si)n films. The temperature dependences of the exchange parameters and the gyromagnetic ratios are determined. Possible mechanisms responsible for the formation of the interlayer coupling are discussed.
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