Abstract
We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12 A or 24 A). The non-magnetic InGaAs spacer layers are 12 A thick. The composition (In content) in InGaMnAs and InGaAs was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers, or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs non-magnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.
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