Abstract
The magnetoresistive (MR) effect and anisotropy field H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</sub> in NiFe thin films, annealed in dc and rotating magnetic fields, were studied. In large MR elements, H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</sub> decreased with annealing at temperatures up to 300°C due to stress relaxation. When the annealing temperature exceeded 350°C, the Δ&3x003C1;/ρ vs. H curves measured along both the hard and easy axes of magnetization showed a large dispersive hysteresis. This resulted in a decrease in Δρ/Δ. In MR elements consisting of a narrow stripe, on the other hand, the magnetoresistive and magnetic properties of the NiFe film changed hardly at all for temperatures up to 500°C, because they were controlled by the shape magnetic anisotropy. An MR head with a magnetic yoke consisting of amorphous CoNbZr was fabricated. The MR head was annealed in dc and rotating magnetic fields in order to obtain a high yoke permeability. A satisfactory MR characteristic was attained for the NiFe film in the head.
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