Abstract
Conventional computer suffers from the von Neumann performance bottleneck due to its hardware architecture that non-volatile memory and logic are separated. The new emerging magnetic logic coupling the extra dimension of spin, shows the potential to overcome this performance bottleneck. Here, we propose a novel category of magnetic logic based on diode-assisted magnetoresistance. By coupling Hall effect and nonlinear transport property in silicon, all four basic Boolean logic operations including AND, NAND, OR and NOR, can be programmed at room temperature with high output ratio in one silicon-based device. Further introducing anomalous Hall effect of magnetic material into magnetic logic, we achieve perpendicular magnetic anisotropy-based magnetic logic which combines the advantages of both high output ratio (>103 %) and low work magnetic field (∼1 mT). Integrated with non-volatile magnetic memory, our logic device with unique magnetoelectric properties has the advantages of current-controlled reconfiguration, zero refresh consumption, instant-on performance and would bridge the processor-memory gap. Our findings would pave the way in magnetic logic and offer a feasible platform to build a new kind of magnetic microprocessor with potential of high performance.
Highlights
Silicon-based complementary metal-oxide-semiconductor (CMOS) logic has achieved great success and becomes the fundamental of modern integrated logic circuits
In our perpendicular magnetic anisotropy (PMA)-based magnetic logic device, both high output ratio and low work magnetic field are satisfied in a simple structure, which could solve the contradiction in magnetic logic in magnetoelectronics
We have proposed and experimentally demonstrated silicon-based and PMA-based magnetic logic devices
Summary
Silicon-based complementary metal-oxide-semiconductor (CMOS) logic has achieved great success and becomes the fundamental of modern integrated logic circuits. Nonlinear transport effect in semiconductors can provide excellent logic output ratio, overcoming the problem of reliability in spin-based logic. Existing magnetic-field-based logic is based on the high-mobility exotic semiconductor materials and incompatible with current mainstream silicon-based information technology. The magnetic field as logic input in magnetic-field-based logic is high (∼0.1 T), making it difficult to be miniaturized. A magnetic logic satisfying reliable output, good compatibility and small work magnetic field remains a challenge. In part III, we proposed a kind of silicon-based magnetic logic based on diode-assisted MR to solve the compatibility problem of magnetic-field-based logic. In part IV, we coupled the anomalous Hall effect in magnetic material to decrease the work magnetic field, and proposed a perpendicular magnetic anisotropy (PMA) based magnetic logic, which had both advantages of high output ratio and low work magnetic field. In part V, we would give the perspective and conclusion of our work
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