Abstract
The results of experimental and theoretical studies of zero-bias anomaly (ZBA) in the Pb-oxide–n-InAs tunnel structures in magnetic field up to 6 T are presented. A specific feature of the structures is a coexistence of the 2D and 3D states at the Fermi energy near the semiconductor surface. Experimentally observed magnetic field dependence of the amplitude of ZBA for different orientations of the magnetic field is in agreement with the proposed theoretical model. According to this model, electrons tunnel into 2D states, and move diffusively in 2D layer, whereas the main contribution to the screening comes from 3D electrons.
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