Abstract
High-T/sub c/ gallium films were prepared by evaporating gallium in partial pressure of oxygen and electron tunneling characteristics of tunnel junctions of the form Al-oxide-Ga were studied with gallium film being in the superconducting and in the normal states. In the superconducting state a sharp, single gap was observed, and from these characteristics it was ascertained that the mechanism of current flow was indeed through electron tunneling. In the normal state a magnetic-field-dependent zero-bias anomaly corresponding to a resistance maximum at zero bias was observed. The conductance varied as V/sup 1/2/ for all the magnetic field values. The bias dependence is in agreement with recent theories on metal-insulator transition in amorphous materials; however, the magnetic field dependence is a novel feature.
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