Abstract
We show here how to create macroscopic quantum states in a semiconductor device: a chain of InAs quantum dots embedded in an InP nanowire. Filling the nanowire with 4 electrons per dot creates a synthetic spin-one chain, with four-fold degenerate topological ground state protected by a Haldane gap. The four states correspond to two spin-½ quasiparticles localised at the ends of the macroscopic wire. The quasiparticle spins are mapped onto a robust, macroscopic, singlet-triplet qubit. These predictions are supported by a microscopic theory and extensive numerical simulations.
Highlights
There is currently a great interest in developing solid state quantum information processing devices[1,2,3,4,5,6,7,8,9]
We demonstrate that a synthetic spin-one chain can be realized in an array of InAs quantum dots (QD) embedded in a semiconductor, e.g., InP, nanowire[24, 25]
We show here that as in lens shaped InAs self-assembled quantum dots[28,29,30,31,32], in InAs quantum dots in InP nanowires exchange interaction of the two electrons on a p-shell leads to a spin polarized, S = 1, triplet ground state
Summary
Extensive atomistic calculations of InAs quantum dots indicate that the effective mass approximation works well for conduction band electrons[32]. We describe a single electron in a nanowire with Nd dots in the effective mass approximation. The potential well depth V is determined by the conduction band offset between strained InAs and InP, of the order of 100 meV24. The tunnelling barrier between two dots is determined by the potential depth V and barrier thickness controlled by the separation between InAs dots, of the order of nanometers.
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