Macroscopic model for the energy balance of an asymmetric capacitively coupled rf discharge

Abstract

An analytical macroscopic model yielding the self-bias voltage dependence on the absorbed radio frequency (rf) power of an asymmetric capacitively coupled rf discharge has been worked out. The model considers -discharges and studies the contribution of the active electron current to the global energy balance. The model is applicable under gas-discharge conditions typical of technological etching devices and offers a reliable diagnostic method for determining the ion flux onto the powered electrode by using easily measurable quantities (the self-bias voltage and absorbed rf power). Theoretically calculated ion fluxes (or equivalently ion current densities) and self-bias voltages for low-pressure oxygen and SF6 -discharges are presented.