Lumped model analysis of the low frequency generation noise in gold-doped silicon junction-gate field-effect transistors

Abstract

The theory of the generation-recombination noise due to trapped charge fluctuation at impurity centers in the transition regions of the junction gate field effect transistors is presented using the lumped equivalent circuit model introduced by Sah. The divergence of the noise power in the saturation range is avoided automatically by the lumped model which gives about 20 percent higher noise resistance value than that obtained from the previous model using analytical cut-off procedure in the gradual channel approximations. Very good agreement between theory and experiments on gold-doped silicon devices are obtained. An excess generation noise component observed near complete channel cut-off is not accounted for by the theory. In addition, a generation noise component (with corner frequency about 5 kHz) due to the presence of high concentration of mobile carriers in the edge of the transition regions is observed. Optimum low noise situation is also discussed.