Abstract
The dependence of the luminescent properties of Ce-doped ZnxSr1-xS thin films on composition and annealing temperature is investigated. It has been found that the emission intensity of Ce3+ photoluminescence is enhanced by the incorporation of an optimum amount of Zn and by the increase of the post-annealing temperature. The luminescent intensity depends strongly on the crystallinity of the films and on the valence state of Ce ions. Fabrication of electroluminescent devices introducing ZnxSr1-xS as a host material has been attempted.
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