Luminescent and dosimetric properties of thin nanostructured layers of aluminum oxide obtained using evaporation of a target by a pulsed electron beam

Abstract

Results of a study of optically and thermally stimulated luminescence (OSL and TL) of thin nanostructured aluminum oxide coatings obtained with evaporation of the target by a pulsed electron beam and deposited on quartz glass, Al, steel, Cu, Ta, and graphite wafers are presented. It follows from data of X-ray phase analysis that the obtained Al2O3 layers have an amorphous nanocrystal structure with different contents of the γ phase depending on the geometry of the wafer location on evaporation and annealing temperature of the samples. It is established that the material of the wafer and the ratio of the amorphous and γ phase in Al2O3 layers affect the yields of OSL and TL. Annealing at up to 970 K results in an increase of γ-phase concentration and OSL and TL responses. It was found that the yields of OSL and TL for the most emission-effective coating samples are comparable with those for the detectors on the basis of anion-defective corundum. The dose-dependence for β radiation, which was linear in the range 20–5000 mGy, was investigated.