Abstract
Low-temperature liquid phase epitaxy is used to grow Ga0.6Al0.4As/GaAs/Ga0.6Al0.4As single quantum wells. Photoluminescence (T=2 K) reveals well thicknesses from 7 to 2.4 nm. Micrographs show that the spatial origin of highly intense luminescence (T=300 K) is in the GaAs layer.
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