Abstract
Photoluminescence of pure ZnO and ZnO:Li thin films prepared in the plasmachemical reactor with the hollow cathode can be observed after annealing of samples in the hydrogen atmosphere at temperatures within the range 300–600 oC. Photoluminescence was excited by light with the photon energy higher than 3.1 eV. Considering the differences between photoluminescence emission spectra of pure and doped ZnO thin films investigated in the spectral region (260–1000 nm) at temperature 12 K, it was concluded (i) photoluminescence emission from the region 3.10-1.77 eV is originated from the intrinsic centers of pure ZnO and (ii) the emission near 1.68 eV is associated with a transition from a state at bottom of the conduction band to a hole trapped in a localized state introduced by Li. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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