Abstract
Ge nanocrystals embedded in a-SiO 2 films have been synthesized by rapid thermal annealing. Under excitation sources of different wavelengths, three photoluminescence (PL) peaks at 1.8, 2.2 and 3.1 eV were observed. A forming gas anneal on the samples resulted in a reduction of the intensity of the PL peaks. Studies of the annealed samples by X-ray diffraction revealed the formation of GeO 2 and Ge nanocrystals in the rapid thermal annealed system. The origin of the PL peaks is suggested to be due to defect related mechanism.
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