Abstract
Cesium Iodide (CsI) doped with Cesium Bromide (CsBr) was grown, using the Bridgman technique, varying the concentration of the Br from 10−2 to 2×10−1 mol. The Br dopant composition was analyzed by chemical and optical methods. A good uniformity of the Br dopant distribution over the height was observed inside each ingot. To evaluate the crystal obtained [CsI(Br)], systematic measurements of optical transmittance, emission spectra, pulse heights and luminescence decay curves were carried out.
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