Abstract
Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H<sub>2</sub>O<sub>2</sub> is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10mA/cm<sup>2</sup> current in mixture of ethanol, HF, and H<sub>2</sub>O<sub>2</sub> solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O<sub>2</sub> pre-oxidizations and high-temperature wet O<sub>2</sub> oxidizations process, a high-quality SiO<sub>2</sub> 30 <i>μm</i> thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO<sub>2</sub> film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003.
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