Abstract
Lead-salt narrow gap semiconductors are useful materials for mid infrared lasers operating at 2.5 - 20 micrometer range. In this paper, we review recent advances in the lead-salt mid- infrared lasers, and propose a new intersubband laser using type-II superlattice structure. Progress in growth methods, studies on band offsets of heterostructures including superlattices, and developments of new lead-salt materials improved the device performance such as operation temperature, threshold current, and wavelength coverage. In PbSnTe system, design of laser structures taking into account the type-I' band offsets realized high- performance long-wavelength lasers with wavelength coverage to 20 micrometer. Development of new active layer materials such as PbEuTe, PbSrSe, and PbSrS realized effective carrier confinement, and extremely increased operation temperature of the lasers in 2.5 - 6 micrometer range. Introduction of quantum wells into the active layer is giving further possibility to the lead-salt mid-infrared lasers.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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