Abstract
Investigations of transient photoluminescence induced by external electric fields parallel to the layers of GaAs/Al<sub>0.35</sub>Ga<sub>0.65</sub>As quantum wells are reviewed. The photoluminescence was detected by time-correlated single-photon counting technique at liquid nitrogen and liquid helium temperatures applying electric fields of nanosecond duration to the wells of different width. It is shown how experimentally one can resolve between excitonic and donor impact ionization processes in combining spectral and time domains. From the study of the spectral-temporal dynamics at initial moments we have determined the coefficient of exciton impact ionization as a function of electric field for various widths of the quantum wells.
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