Abstract
Extreme Ultra Violet Lithography (EUVL, (lambda) equals 13.4 nm) is one of the next generation lithography technologies developed for patterns smaller than 70 nm feature size. In our system, EUV light is obtained from an undulator in an electron storage ring. This provides a temporally and spatially coherent light source for Extreme Ultra Violet Interferometric lithography (EUV-IL). The patterning system uses a Lloyd mirror interferometer. Using EUV-IL to print high-resolution pattern allows us to study resist characteristic in the EUV. Previously we demonstrated 19 nmL/S fringe pattern by using IL technique with EUV light. In this paper, we will report our progress on development of sub-50 nm dense line/space patterns using EUV-IL, and the transferring patterns into 0.12 micrometer Poly-Si.
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