Abstract
In this study, damage induced by Ar+ and Si+ ion implantation and its annealing behavior during rapid thermal annealing for 10 sec at temperatures between 575-1100°C were investigated by thermal wave modulated optical reflectance, deep level transient spectroscopy, reflection high energy electron diffraction, Rutherford backscattering aligned spectra and transmission electron microscopy. Our data show that (1) thermal wave signal and its variation with repect to rapid thermal anneal temperature strongly depend upon implant dose and anneal temperature; (2) both implant species induce four distinctive deep trap levels; (3) these traps evolve during rapid thermal annealing!; and (4) for the single Si+ ion implanted samples, the variation of total trap concentration with respect to rapid thermal anneal temperatures follows that of TW. However, in the case of Ar+ ion implanted samples, no apparent correlation between thermal wave signal and DLTS trap condition could be made.
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