Abstract
We performed silicon-to-In<SUB>2</SUB>O<SUB>3</SUB>:Sn coated glass bonding using anodic bonding process. Corning #7740 glass layer was deposited on In<SUB>2</SUB>O<SUB>3</SUB>:Sn coated glass by electron beam evaporation. It was confirmed that the composition of the deposited glass layer was nearly same as that of the bulk Corning #7740 glass plate using Auger electron spectroscopy. In this work, silicon and In<SUB>2</SUB>O<SUB>3</SUB>:Sn coated glass with the deposited glass layer can be bonded at 190 degree(s)C with an applied voltage of 60V<SUB>DC</SUB>. In order to study the role of sodium ion, firstly, the bonding kinetics are modeled as resulting from the transport of sodium ions through the surface of the deposited glass layer. Secondary, the results of secondary ion mass spectroscopy analysis were used to confirm the modeled bonding kinetics of silicon-to-In<SUB>2</SUB>O<SUB>3</SUB>:Sn coated glass. This process can be applied for the vacuum packaging of microelectronic devices such as field emission display.
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