Abstract
Pre-diffusion limited technique of liquid phase epitaxy is used for preparation of quaternary solid solution GaxIn1−xAsyP1−y and binary InP. Surface morphology of the layers prepared at this condition has been compared with those prepared by conventional LPE. Quaternary strained layers with composition near to Ga0.21In0.79As0.75P0.25 were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.
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