Low-temperature polycrystalline Si film growth on amorphous insulators by reactive ion beam deposition

Abstract

Polycrystalline Si (polysilicon) film growth on amorphous insulators, such as borosilicate glass, fused quartz, silicon oxide films, and silicon nitride films, was investigated by using the reactive ion beam deposition (RIBD) method proposed recently. The RIBD method is based on the use of reactive ionized species produced from SiH4 electron-cyclotron-resonance plasma and controlled in the low-energy region of less than 500 eV. Polysilicon films can be grown at the low temperature of 250 °C. In the growth temperature range between 550 and 700 °C, polysilicon films with the strong Si(220)-preferred orientation parallel to the substrate surface can be obtained. X-ray diffraction intensity corresponding to Si(220) lattice planes was clearly dependent on ion energy, which presented a maximal level at 70–130 eV.