Abstract
Photoelectric characteristics of films of the Pb0.902Sn0.098Se solid solution based on the four-layer (SnSe-PbSe)2 composition obtained by layer-by-layer hydrochemical synthesis with subsequent heat treatment in air within the temperature range 523–700 K are investigated. The measurements are performed in the temperature range 220–300 K. The thermal and optical band gaps, temperature coefficient of the optical band gap, dark resistance, volt-watt sensitivity, and spectral characteristics are determined. It is established that, at heat treatment temperatures below 573 K, the conductivity of the four-layer (SnSe-PbSe)2 compositions is characteristic of metals, while at higher temperatures, it is characteristic of p-type semiconductors.
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