Low-temperature expitaxial growth of (100) silicon

Abstract

Epitaxial silicon films have been grown onto as-received and implanted (100) silicon wafers by electron-beam evaporation. A high-temperature treatment to remove native oxide was not employed. Optimum temperatures for epitaxial growth were between 600°C and 700°C. Deposition rates were from 30 to 80 nm/min and the operating pressure was < 5 × 10 − 7 mbar. The Rutherford backscattering spectra of the optimum films have values of χmin indistinguishable from that of a bulk wafer (3.9%).